A research team from the Department of Energy Science and Engineering at Daegu Gyeongbuk Institute of Science & Technology, led by Professor Jiwoong Yang, has developed a new technique to regulate doping during the nucleus (seed) phase, enhancing the performance of semiconductor nanocrystals. The findings were published in Small Science.
This study was conducted in collaboration with a team from Korea University’s Department of Chemistry, led by Stefan Ringe (Dongwon Kim). The research highlights how the choice of doping element (dopant) influences the doping process and location. The technology is expected to have wide applications in advanced electronic devices such as transistors and displays.
As advanced technologies like transistors and displays continue to evolve, there is increasing interest in techniques that precisely control doping in nanoscale semiconductors. II-VI semiconductor-based nanocrystals, known for their excellent optical and electrical properties, have been the focus of extensive research.
Despite the importance of doping in semiconductor technology, achieving high doping efficiency in nanocrystals remains challenging. This is primarily because dopants often adsorb onto the surface during growth rather than penetrating the interior effectively.
Professor Yang’s team addressed this issue by developing a controlled nucleation doping method, which introduces dopants during the “nanocluster” phase before nanocrystal growth. Using this approach, the team successfully doped ZnSe semiconductor nanocrystals with precision and stability, while identifying the factors influencing doping process variations based on the dopant type.
Previous studies on doping II-VI semiconductor nanocrystals frequently used CdSe, a heavy metal with poor stability and environmental hazards. This study introduced a method that eliminates the need for heavy metals, offering a more sustainable and environmentally friendly alternative for practical applications.
The findings also demonstrate the potential of this technology for a wide range of electronic devices, including transistors and displays.
This research has enabled us to systematically establish doping control technology in nanocrystals. The findings will not only serve as important foundational data for designing and fabricating optoelectronic devices, such as next-generation displays and transistors, but also open up new possibilities for designing innovative devices through precise doping control technology.
Jiwoong Yang, Professor, Daegu Gyeongbuk Institute of Science & Technology
The National Research Foundation of Korea’s Excellent New Research Project, the Ministry of Trade, Industry and Energy’s Korea-US International Joint Technology Development Project, and the DGIST Sensorium Institute supported the research.
Journal Reference:
Ji, S., et al. (2024) Nucleation‐Controlled Doping of II–VI Semiconductor Nanocrystals Mediated by Magic‐Sized Clusters. Small Science. doi.org/10.1002/smsc.202400300.
